Home Course Info Lecture Notes Homework and Exams Handouts Newsgroup

EE243 Advanced IC Processing and Layout
Spring 2009 Course Information

This course emphasizes the physical principles and mathematical models used in IC fabrication technology. It starts with a brief overview of the CMOS fabrication sequence, its key technology elements, and the issues that limit these processes. We then cover the front-end of the line processes: mechanisms and models for implantation, oxidation, and diffusion. We will discuss advanced models for optical image formation , resist response, defect printability, inspection and next generation nm-scale printing. Back end of the line processes include etching, physical depositions (sputtering) and chemical deposition (ALD and Epi), processes, CMP, and multilevel metallization. Extension of these process modules for displays, MEMS, Photovoltaics, and Nanotechnology will be discussed. The last 3 weeks cover basic statistical process control (SPC) and design of experiments (DOE) as used to support high yield manufacturing

Course Materials

The materials used in this course have been co-developed with Professors Andy Neureuther and Costas Spanos. Notes for each lecture and some (but limited) reading materials will be handed out in class and posted on the class web.

Required Textbooks:

Plummer, Deal and Griffin, 'Silicon VLSI Technology: Fundamentals, Practice and Modeling', Prentice Hall. 

SPC and DOE - Spanos and May. Chapters 4, 6 and 7

Homework

Homework assignments will be posted on the web on Mondays and are due Wednesdays of the following week

Term Project

A term project related to state-of-the-art technology. The project can critique the pros and cons of an emerging technology; provide engineering design data and models; or apply a technology to novel situations. The use of TCAD tools or SPC methods are highly encouraged in these investigations. A short (10 min) web based presentation to class is required near the end of the semester.

Exam Schedule:

Midterm: About 8th Week of class, 2-hr exam

Final Exam: 3-hr exam

Grading Policy: Homework and Class Participation: 25% Project: 25% Midterm: 25% Final Exam: 25%

Last updated  1/21/2009

Usage of this site is subject to the Computer Usage Policy.