EE230, Spring 2008
Solid State Electronics
Tuesday & Thursday 11:00-12:30 pm, 299 Cory Hall
Prerequisites:
Physics 137A (Quantum Mechanics), Basic Semiconductor Physics as covered
in EE130
Primary Text:
Introduction to Solid State Physics, 8th edition, by Charles Kittel
(Wiley, 2005)
Supplementary Texts (available on reserve in Engineering library):
Fundamentals of Carrier Transport, by Mark Lundstrom,
(Cambridge Press, 2000).
Quantum Transport: Atom to Transistor, by Supriyo Datta
(Cambridge Press, 2005
The Physics of Low-Dimensional Semiconductors, by John H. Davies
(Cambridge Press, 2006)
Informational Handout
Class Syllabus
Academic Dishonesty Policy
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Lecturer:
Professor Jeffrey Bokor
508 Cory Hall
Phone: (510) 642-4134
jbokor@eecs.berkeley.edu
Office Hours:
508 Cory Hall
Wednesdays 2:00-3:00 pm
Course Administrative Assistant:
Rosemary Alonso
(510) 642-2386
rosemary@eecs.berkeley.edu
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Welcome to EE230
1/31/2008: Class will be held today at the regularly scheduled time.
2/22/2008: There was a typo in problem 4b of problem set 2.
The corrected version is now posted.
3/5/2008: See reference posted below on tight binding calculations
of diamond and zinc-blende crystals.
4/2/2008: There will be no class on April 24 and May 8.
Make-up lectures for these, plus the two classes that were cancelled
when I was sick are scheduled on the following dates from 5:00PM-6:30PM
in 299 Cory:
1) Thursday, April 3
2) Tuesday, April 8
3) Thursday, April 10
4) Thursday, April 17
4/11/2008: For the next lecture on 4/15/2008, we will discuss the
selected papers on hot electron effects. These are posted below.
4/29/08: In Problem Set 5, number 1 it should read h bar. The
originally posted version did not clearly show the bar. A new version
has been posted.
5/6/08: The projects are due on Friday, 5/8/08 by 2pm to my office,
508 Cory Hall.
5/13/08: Hint on Final Problem Set, problem 2: Write the
energy flux Fw in terms of Te and J. Then when you calculate the
divergence of Fw, keep in mind that J must be constant along the slab
in steady state.
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Chapter 1 - Crystal
Structure
Chapter 2 - Defects
Chapter 3 - Phonons
Chapter 4 - Free Electron
Gas
Chapter 5 - Band Theory
Chapter 6 - Momentum and
Effective Mass
Chapter 7 - Heterostructures
and Sub-Bands
(supplementary figures)
Chapter 8 - Occupation
statistics
Chapter 9 - Transport
theory
Chapter 10 - Scattering
theory
Chapter 11 -
Electron-phonon scattering
Chapter 12
- Low-field and High-field transport
Chapter 13 - Quantum
Transport
Chapter 14 - Optical
Transitions
Chapter 15 - Recombination
Chapter 16 - Surfaces
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Problem set 1 -
solutions
Problem set 2 - solutions
Problem set 3 -
solutions
Problem set 4 -
solutions
Problem set 5 -
solutions
Final Problem set -
solutions
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D. J. Chadi and M. L. Cohen,
"Tight-Binding Calculations of Valence Bands of Diamond and
Zincblende Crystals," Physica Status Solidi B-Basic Research,
vol. 68, pp. 405-419, 1975.
C. Waschke, et
al., “Coherent submillimeter-wave emission from Bloch oscillations
in a semiconductor superlattice,” Phys. Rev. Lett. 70, 3319 -
3322 (1993).
Selected Papers on Hot Electron Effects
- S. Takagi,
A. Toriumi, M. Iwase, and H. Tango, "On the Universality of Inversion
Layer Mobility in Si Mosfets .1. Effects of Substrate Impurity
Concentration," Ieee Transactions on Electron Devices, vol. 41, pp.
2357-2362, Dec 1994.
- S. Takagi,
A. Toriumi, M. Iwase, and H. Tango, "On the Universality of Inversion
Layer Mobility in Si Mosfets .2. Effects of Surface Orientation," Ieee
Transactions on Electron Devices, vol. 41, pp. 2363-2368, Dec 1994.
- J. E. Chung, M.
C. Jeng, J. E. Moon, P. K. Ko, and C. M. Hu, "Low-Voltage Hot-Electron
Currents and Degradation in Deep-Submicrometer Mosfets," Ieee
Transactions on Electron Devices, vol. 37, pp. 1651-1657, Jul 1990.
- M. R. Pinto,
M. R. Pinto, J. Bude, and C. S. Rafferty, "Simulation Of ULSI Silicon
MOSFETs
Simulation Of ULSI Silicon MOSFETs," in VLSI Process and Device
Modeling, 1993. (1993 VPAD) 1993 International Workshop on, 1993, pp.
22-25.
- A. Benvenuti, W. M.
Coughrau, Jr., and M. R. Pinto, "A thermal-fully hydrodynamic model for
semiconductor devices and applications to III-V HBT simulation,"
Electron Devices, IEEE Transactions on, vol. 44, pp. 1349-1359, 1997.
- M. V. Fischetti, "Monte Carlo
simulation of transport in technologically significant semiconductors
of the diamond and zinc-blende structures. I. Homogeneous transport,"
IEEE Transactions on Electron Devices, vol. 38, pp. 634-649, 1991.
- M. V.
Fischetti, S. E. Laux, and D. J. Dimaria, "The Physics of Hot-Electron
Degradation of Si Mosfets - Can We Understand It," Applied Surface
Science, vol. 39, pp. 578-596, Oct 1989.
- F.
Assaderaghi, P. K. Kop, and C. Hu, "Observation of velocity overshoot
in silicon inversion layers," Electron Device Letters, IEEE, vol. 14,
pp. 484-486, 1993.
-
J. Bude, N. Sano, and A. Yoshii, "Hot-carrier luminescence in Si,"
Physical Review B, vol. 45, p. 5848, 1992.
- D. J. Frank, S.
E. Laux, and M. V. Fischetti, "Monte Carlo simulation of a 30 nm
dual-gate MOSFET: how short can Si go?," in Electron Devices Meeting,
1992. Technical Digest., International, 1992, pp. 553-556.
- J. A. Kash and
J. C. Tsang, "Dynamic internal testing of CMOS circuits using hot
luminescence," Electron Device Letters, IEEE, vol. 18, pp. 330-332,
1997.
- J. C.
Tsang, J. A. Kash, and D. P. Vallett, "Time-resolved optical
characterization of electrical activity in integrated circuits,"
Proceedings of the IEEE, vol. 88, pp. 1440-1459, 2000.
Strained Silicon
Quantum Transport
- B. J. Vanwees, L. P.
Kouwenhoven, E. M. M. Willems, C. Harmans, J. E. Mooij, H. Vanhouten,
C. W. J. Beenakker, J. G. Williamson, and C. T. Foxon, "Quantum
Ballistic and Adiabatic Electron-Transport Studied with Quantum Point
Contacts," Physical Review B, vol. 43, pp. 12431-12453, May 1991.
-
S. Frank, P. Poncharal, Z. L. Wang, and W. A. de Heer, "Carbon nanotube
quantum resistors," Science, vol. 280, pp. 1744-1746, Jun 1998.
-
C. Dekker, "Carbon nanotubes as molecular quantum wires," Physics
Today, vol. 52, pp. 22-28, May 1999.
-
R. G. Knobel and
A. N. Cleland, "Nanometre-scale displacement sensing using a single
electron transistor," Nature, vol. 424, pp. 291-293, Jul 2003.
-
K. Uchida, J. Koga, R.
Ohba, and A. Toriumi, "Programmable single-electron transistor logic
for future low-power intelligent LSI: Proposal and room-temperature
operation," Ieee Transactions on Electron Devices, vol. 50, pp.
1623-1630, Jul 2003.
Silicon Surfaces
- F. J. Giessibl, S.
Hembacher, H. Bielefeldt, and J. Mannhart, "Subatomic features on the
silicon (111)-(7x7) surface observed by atomic force microscopy,"
Science, vol. 289, pp. 422-425, Jul 2000.
- M. C. Hersam, N. P.
Guisinger, and J. W. Lyding, "Silicon-based molecular nanotechnology,"
Nanotechnology, vol. 11, pp. 70-76, Jun 2000.
- M. C. Hersam, N. P.
Guisinger, J. W. Lyding, D. S. Thompson, and J. S. Moore, "Atomic-level
study of the robustness of the Si(100)-2x1 : H surface following
exposure to ambient conditions," Applied Physics Letters, vol. 78, pp.
886-888, Feb 2001.
- J. E. Northrup and M. L.
Cohen, "Reconstruction Mechanism and Surface-State Dispersion for
Si(111)-(2 X 1)," Physical Review Letters, vol. 49, pp. 1349-1352,
1982.
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Last updated 01/16/08
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