$ Define the grid MESH GRID.FAC=1.0 MASK IN.FILE=masks.tl1 PRINT GRID="Field,Poly" $ Initialize the structure INITIALIZE <100> BORON=1.1E15 $ Boron field implant IMPLANT BORON DOSE=3E12 ENERGY=60 TILT=7 ROTATION=30 $ Field oxidation DIFFUSION TIME=5 TEMP=1050 DRYO2 DIFFUSION TIME=70 TEMP=1050 CONTINUE WETO2 DIFFUSION TIME=5 TEMP=1050 CONTINUE DRYO2 $ Field Lithography DEPOSITION PHOTORESIST POSITIVE THICKNESS=1 EXPOSE MASK=Field DEVELOP ETCH OXIDE ISOTROPI THICKNESS=0.640 ETCH PHOTORESIST ALL $ Gate Oxidation DIFFUSION TIME=30 TEMP=1103 DRYO2 $ Poly Deposition DEPOSITION POLYSILICON THICK=0.213 $ Gate Lithography DEPOSITION PHOTORESIST POSITIVE THICKNESS=1 EXPOSE MASK=Gate DEVELOP ETCH POLYSILICON ISOTROPI THICKNESS=0.213 ETCH OXIDE ISOTROPI THICKNESS=0.092 ETCH PHOTORESIST ALL $Spin on Glass, Pre-deposition, and Drive in. DEPOSITION PHOTORESIST PHOSPHORUS=1e25 THICKNESS=1 DIFFUSION TIME=5 TEMP=1050 ETCH PHOTORESIST ALL METHOD COMPRESS DIFFUSION TIME=12 TEMP=1050 WETO2 DIFFUSION TIME=25 TEMP=1050 CONTINUE INERT $Contact Hole Lithography DEPOSITION PHOTORESIST POSITIVE THICKNESS=1 EXPOSE MASK=Contact DEVELOP ETCH OXIDE ISOTROPI THICKNESS=0.180 ETCH PHOTORESIST ALL $Metal Layers DEPOSITION ALUMINUM THICKNESS=1.6 DEPOSITION PHOTORESIST POSITIVE THICKNESS=1 EXPOSE MASK=Metal DEVELOP ETCH ALUMINUM ISOTROPI THICKNESS=1.84 ETCH PHOTORESIST ALL $ Save structure SAVEFILE OUT.FILE=OUTPUT $ Plot the initial NMOS structure SELECT Z=LOG10(BORON) TITLE="Final MOSFET Structure" PLOT.2D Y.MAX=2.0 $ Color fill the regions COLOR SILICON COLOR=7 COLOR OXIDE COLOR=5 COLOR POLY COLOR=3 COLOR ALUM COLOR=2 $ Plot contours of boron FOREACH X (15 TO 20 STEP 0.5) CONTOUR VALUE=X LINE=5 COLOR=2 END $ Replot boundaries PLOT.2D ^AX ^CL $ Print doping information under field oxide SELECT Z=DOPING PRINT.1D X.VALUE=4.5 X.MAX=3 savefile out.f=structure.tif tif