UNIVERSITY OF CALIFORNIA

College of Engineering

Department of Electrical Engineering

and Computer Sciences

EECS 131

Semiconductor Electronics

Fall 98

Prof. John S. Smith


Course Outline

Week of Aug 25,27    Chapter 1:

Introduction, atomic structure, quantum mechanics of electrons


Week of Sept 1,3    Chapter 1 continued:

Continue quantum mechanics, basic free electron theory, statistical mechanics.


Week of Sept 8, 10    Chapter 2:

States of matter, bonding of atoms crystals and crystal symmetry, Lattice types, crystal defects, physical properties.


Week of Sept 15, 17    Chapter 2 continued:

Reciprocal Lattice, Bragg Scattering, Lattice dynamics, Phonons, Coupled Oscillators.


Week of Sept 22, 24    Chapter 2 continued:

Phase and group velocity, waves in crystals. Energy bands in solids, metals and insulators. Fermi levels and carrier concentrations.


Week of Sept 29, Oct 1    Chapter 3:

Semiconducting materials, Silicon and GaAs examples, Band structure of semiconducting materials, valence and conduction band model of semiconductors.
Defects, dopants and traps, equilibrium characteristics of doped semiconductors


Week of Oct 6, 8    Chapter 4:

Carrier transport, drift, mobility, conductivity, diffusion, the Hall effect.

The Einstein relations, equilibrium across interfaces, ohmic and rectifying junctions.


Week of Oct 13, 16    Chapter 5:


MIDTERM


Excess carriers in semiconductors, injection, recombination, quasi-Fermi levels


Week of Oct 20, 22    Chapter 5 continued:

Transport and continuity equations, and the basic equations for semiconductor devices

Solution of the equations for special cases


Week of Oct 27, 29    Chapter 6:

P-N junctions, abrupt, linear. Modeling semiconductor devices.


Week of Nov 3, 5    Chapter 8:

Tunneling in semiconductors, Zener and avalanche breakdown in diodes


Week of Nov 10, 12    Chapter 10:

Ohmic contacts, tunnel diodes and Schottky barrier diodes, heterojunctions.


Week of Nov 17, 19    Chapter 16:

MOS devices, interface between silicon and silicon dioxide, transistors and charge coupled devices, structures and modes


Week of Nov 24, 26    Chapter 16 cont:

high mobility devices, short-channel effects, quantum tunneling effects and devices, ballistic effects.


Week of Dec 1, 3

Special topics.


Dec 8, 10:

Review.