Homework #1: Si crystal structure; intrinsic semiconductor; doping; carrier concentrations
Assignment
(due 1/31/13)
Solution
Homework #2: Density of states and the Fermi function; energy band diagram, mobility and drift; resistivity and resistance
Assignment
(due 2/7/13)
Solution
Homework #3: Nonuniformly doped semiconductor; generation and recombination of carriers; Continuity Equation; quasiFermi levels
Assignment
(due 2/14/13)
Solution
Homework #4: Metalsemiconductor (MS) energyband diagrams; MS electrostatics; practical ohmic contact; smallsignal capacitance of a Schottky contact
Assignment
(due 2/21/13)
Solution
Homework #5: pn junction electrostatics; pin diode; pn junction diode current components; comparison of Schottky and pn diodes Assignment
(due 2/28/13)
Solution
Homework #6: Narrowbase diode; pn junction breakdown; effect of series resistance on diode IV; effect of recombinationgeneration in the depletion region Assignment (due 3/7/13)
Solution
Homework #7: pn junction diode charge control model, smallsignal model and transient response; photodiode Assignment (due 3/14/13)
Solution
Homework #8: Optoelectronic diodes; MOS capacitor energy band diagrams; MOS threshold voltage; MOS areal charge density Assignment (due 3/21/13)
Solution
Homework #9: MOS CV characteristics and V_{T} adjustment; effect of oxide chargeAssignment (due 4/4/13)
Solution
Homework #10: MOSFET as resistor; Longchannel MOSFET IV characteristics; impact of body biasing; design project preparationAssignment (due 4/11/13)
Solution
Answers to Problem 4
Homework #11: MOSFET subthreshold leakage current, smallsignal model, velocity saturation, shortchannel effectAssignment (due 4/18/13)
Solution
Homework #12: MOSFET with retrograde channel doping; MOSFET source/drain structure; qualitative BJT questionsAssignment  updated 4/21/13 (due 4/25/13)
Solution
Homework #13: BJT current components and output characteristics, EbersMoll model, deviations from the ideal, Gummel plotAssignment (due 5/2/13)
Solution
Homework #14: BJT smallsignal model, base transit time and transient response; advanced MOSFET structuresAssignment (due 5/9/13)
Solution
