EE130 Lecture Notes
Spring 2007
(Powerpoint format, unless otherwise noted)
Course Overview and Introduction (pdf format)

Lecture 1: Semiconductor materials; Si structure (marked version)
Lecture 2: Electrons and holes; energy-band model
(marked version)
Lecture 3: Band-gap energy; density of states; doping (marked version)
Lecture 4: Thermal equilibrium; carrier distributions and concentrations  (marked version)
Lecture 5: Determination of EF; carrier properties and drift  (marked version)
Lecture 6: Carrier scattering; drift current; resistivity (marked version)
Lecture 7: Carrier diffusion; diffusion current (marked version)
Lecture 8: Generation and recombination; minority carrier lifetime (marked version)
Lecture 9: Continuity equations; minority carrier diffusion equations; quasi-Fermi levels (marked version)
Lectures 10 & 11: Work function; metal-semiconductor band diagram; depletion width (marked version)
Lecture 12 (Slide 7 corrected): I-V characteristics (marked version, Slides 2 and 7 corrected)
Lecture 13: Practical ohmic contacts; small-signal capacitance (marked version)
Lecture 14: Electrostatics (marked version)
Lectures 15 and 16: I-V characteristics (marked version)
Lecture 17: Reverse-bias current; reverse-bias breakdown (marked version)
Lecture 18: Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode (marked version)
Lecture 19: Charge control model (marked version)
Lecture 20: Small-signal model; transient response: turn-on (marked version)
Lecture 21: Transient response: turn-off; diode applications (marked version)

Lecture 22: Introduction (marked version)
Lecture 23: BJT fundamentals (marked version)
Lecture 24: Ideal transistor analysis; Ebers-Moll model (marked version)
Lecture 25: Deviations from the ideal; Gummel plot
(marked version)
Lecture 26: Modern BJT structures; charge control model; base transit time (marked version)
Lecture 27: Small signal model; cutoff frequency fT; transient response (marked version) -- updated 3/21/07
PNPN DEVICES: Lecture 28

Lecture 29: Structure; energy band diagram (marked version)
Lectures 30 and 31: Electrostatics (marked version)
Lecture 32: Capacitance vs. voltage characteristic (marked version)
Lecture 33: Effects of oxide charge (marked version)
Lecture 34: MOS non-idealities; threshold voltage adjustment (marked version)

Lecture 35: MOSFET structure and operation (marked version) -- updated 4/18/07
Lecture 36: Qualitative theory; long-channel I-V characteristics (marked version)
Lecture 37: Effective mobility (marked version)
Lecture 38: Modified long-channel I-V characteristics; body effect parameter; PMOS I-V; small-signal model (marked version)
Lecture 39: Sub-threshold leakage current; gate-length scaling (marked version)
Lecture 40: Velocity saturation (marked version)
Lecture 41: Short-channel effect; source/drain structure; drain-induced barrier lowering; excess current effects (marked version)
Lecture 42: IC technology; MOSFET fabrication process; CMOS latchup (marked version)
Lecture 43: SOI technology (marked version)
Lecture 44: Transistor scaling to the limit (pdf format)

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 Last updated 5/6/07