| EE130 Homeworks | ||||||
| Spring 2007 |
||||||
| (Word format) |
Homework #1: Crystal
structure; carrier concentrations; doping
Assignment (due 1/29/07)Homework #2: Carrier energy distributions; energy band diagram; dopant freezeout; carrier drift Assignment (due 2/5/07)Homework #3: Mobility temperature dependence; band diagram, electrostatic potential, and E-field; minority carrier diffusion equations; quasi-Fermi levels Assignment (due 2/12/07)Homework #4: Metal-semiconductor contacts: energy-band diagrams, electrostatics, I-V characteristics Assignment (due 2/21/07)Homework #5: Practical ohmic contacts; MS junction small-signal capacitance; pn junction electrostatics Homework #6: pn junctions: carrier concentration profiles, current distributions, I-V characteristics, reverse breakdown Homework #7: pn junctions: non-ideal behavior, small signal model, transient response; short-base diode Homework #8: optoelectronic diodes; BJT electrostatics; BJT performance parameters; project preparation Homework #9: BJT current components and performance parameters; Ebers-Moll model; BJT deviations from the ideal Homework #10: BJT small signal model; BJT transient response; thyristor Homework #11: MOS capacitor: fundamentals, charge density, capacitance Homework #12: MOS capacitor: oxide charges, non-idealities, VT adjustment Homework #13: MOSFET: inversion charge density, long-channel I-V, body biasing, transconductance Homework #14: MOSFET: subthreshold leakage; velocity saturation; short channel effect; source/drain structure |