EE130 Project Example

You may wish to run the following design case, to see if there might be any errors in your equations.

BJT Design Parameters:
WE = 0.2 mm; NDE = 1019 cm-3
WB = 0.2 mm; NAB = 1017 cm-3
WC = 2.0 mm; NDC = 1016 cm-3

At T = 300K:

niE = 4.3x1010 cm-3
Minority-carrier mobilities: mE = 69 cm2/Vs; mB = 774 cm2/Vs; mC = 437 cm2/Vs
Minority-carrier diffusion lengths: LE = 13.3 mm; LB = 44.7 mm; LC = 33.6 mm

Zero-bias pn-junction depletion widths: WdepBE = 0.12 mm; WdepBC = 0.33 mm

VBE = 0.806V to achieve IC = 1 mA

Performance Parameters at IC = 1 mA:
tF = 4.7 ps

  • bdc = ~110
  • VA = ~5.5 V
  • VPT = ~4.0 V
  • fT = ~20.4 GHz