Lecture:
Currents in pn diodes due to injection and then diffusion of minority carriers to the contacts where they recombine. The minority charge in transit leads to a diffusion capacitance as well as a junction capacitance in the small-signal model. Generalization to bipolar transistors with back to back junctions and a means of collecting carriers crossing the base. Ebers-Moll general model.
Discussion Sections:
More MOS amplifiers and circuits to practice Bode plots and determine the dominant gain and bandwidth performance. Examples of law of the junction and currents due to minority carrier diffusion. Clarification of how the majority and minority currents make up the total current in each region of a diode.
Laboratories:
Experiment #6 Single Stage Amplifiers with passive Loads - MOS This week you measure D.C. and small-signal parameters of a simple amplifier biased two ways. Prelab is the large- signal and small-signal analysis of the MOS amplifier. See the Prelab information on the lab news web page under updates.
Homework:
The homework is being graded on a scale of 0-10 and you must achieve an 8 or better in the initial grading to have mastered the homework on schedule. Questions about grading should be emailed to kobe@uclink4.berkeley.edu.
| 3/5 | Lecture 19 - pn diode potential, carrier densities due to law of the
junction, and currents.
Reading - H&S 6.3 |
| 3/7 |
Lecture 20 - pn diode total current components. Diffusion capacitance, junction capacitance, resistance and small signal model. Reading
- H&S 6.4, 6.5, 6.9
|
| 3/7 | Lecture 21 - Generalization of potential, carrier densities and currents to
npn transistors.
Estimation of forward active current gain. Reverse-active operation and general
operation using the Ebers-Moll model.
Reading - H&S Chapter 7.1-7.4 Homework #7 is due in box outside of 277 Cory on way into the classroom at start of class. |