Discussion Sections: 

Examples of doping, carriers, conductivity and currents including estimating doping from resistance. Examples of statistical variations and combining effects. Device cross section evolution in CMOS process flow and recognizing circuits and devices from layout. Example of parallel plate depleted region electrostatic analysis. Discussion of the physical basis for MOS threshold voltage expression terms. 

Laboratories: 

Experiment 2 Introduction to Electronic Test Equipment: This week you will become familiar with the rest of the equipment in the laboratory and will become reasonably adept at using the HP 54615B oscilloscope to perform DC and transient measurements. Prelab assignment is to read the lab and explain how in 'Lab Tips for Experiment 2' the series resistor technique gives works and results in only a 1% error.

 

1/29	Lecture 6 - Electrostatic analysis for distributed charge density. Uniform charge density creates linearly changing electric field with distance and quadradically changing potential or voltage between regions.              Reading - H&S 3.1
1/31	Lecture 7 - Capacitance of a pn junction. At the junction a depletion region develops. The capacitance is the small signal (incremental) change in the charge with a small (incremental) change in the voltage between the p-type and n-type regions. Reading - H&S Chapter 3.2, 3.3, 3.6 (Light on the material in 3.4 which is more appropriate for EE 130 but know how to use resulting expressions for maximum field, depletion region size, etc.)  Homework 3 - will be distributed
2/2	Lecture 8 - MOS threshold voltage. The built-in internal potential of the gate and substrate, the voltage drop with the deep depletion approximation, the depletion region charge and lattice charge from the threshold implant all combine to set the voltage at which mobile carriers appear under the gate. Reading - H&S Chapter 3.7  Homework #2 is due in box outside of 277 Cory on way into the classroom at start of class.