EDO - extended data out (similar to fast-page mode)

• RAS cycle fetched rows of data from cell array blocks (long access time, around 100ns)
• Subsequent CAS cycles quickly access data from row buffers if within an address page (page is around 256 Bytes)

SDRAM - synchronous DRAM

• clocked interface
• uses dual banks internally. Start access in one back then next, then receive data from first then second.

DDR - Double data rate SDRAM

• Uses both rising (positive edge) and falling (negative) edge of clock for data transfer. (typical 100MHz clock with 200 MHz transfer).

RDRAM - Rambus DRAM

• Entire data blocks are access and transferred out on a highspeed bus-like interface (500 MB/s, 1.6 GB/s)
• Tricky system level design. More expensive memory chips.