EDO - extended data out (similar to fast-page mode)
- RAS cycle fetched rows of data from cell array blocks (long access
time, around 100ns)
- Subsequent CAS cycles quickly access data from row buffers if within an address page (page is around 256 Bytes)
SDRAM - synchronous DRAM
- clocked interface
- uses dual banks internally. Start access in one back then next,
then receive data from first then second.
DDR - Double data rate SDRAM
- Uses both rising (positive edge) and falling (negative) edge of
clock for data transfer. (typical 100MHz clock with 200 MHz transfer).
RDRAM - Rambus DRAM
- Entire data blocks are access and transferred out on a highspeed
bus-like interface (500 MB/s, 1.6 GB/s)
- Tricky system level design. More expensive memory chips.