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EE243 Advanced IC Processing and Layout
Spring 2008  Course Information

This course emphasizes the physical principles and mathematical models used in microfabrication technology. It begins with a brief overview of the CMOS fabrication process flow, its key technology elements, and the issues that limit these processes. We then cover the front-end processes :mechanisms and models for implantation, oxidation and diffusion. Advanced models for optical image formation, resist response, defect printability, inspection and next generation electron-beam and exposures systems. Back end of the line processes include etching, physical and chemical deposition processes, CMP, and multilevel metallization. Extension of these process modules for displays, MEMS, and Nanotechnology will be discussed. The last 3 weeks cover basic statistical process control (SPC) and design of experiments (DOE) as used to support high yield manufacturing

 

Course Materials

The materials used in this course have been co-developed with Professors Andy Neureuther and Costas Spanos. Notes for each lecture and some (but limited) reading materials will be handed out in class and posted on the class web.

 

Required Textbooks:

Plummer, Deal and Griffin, 'Silicon VLSI Technology: Fundamentals, Practice and Modeling', Prentice Hall. 

SPC and DOE - Spanos and May. Chapters 4, 6 and 7

 

Homework

Homework assignments will be posted on the web on Mondays and are due Wednesdays of the following week .

 

Term Project

 

A term project related to state-of-the-art  technology. The project  can critique the pros and cons of an emerging technology; provide engineering design data and models; or apply a technology to novel situations. The use of TCAD tools or SPC methods are highly encouraged in these investigations. A short (10 min) web based presentation to class is required near the end of the semester.

 

Exam Schedule:

Midterm:  About  8th Week of class, 2-hr exam

Final Exam:  3-hr exam

 

Grading Policy: Homework and Class Participation: 25% Project: 25% Midterm: 25% Final Exam: 25%

 

 

Last updated  1/27/2008

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